Gold diffusion into the p-contacting quaternary in In(x)Ga (1-x)As(y)P(1-y)/InP heterojunction structures.
01 January 1984
The present study has examined the migration of Au into InxGa (1-x)AsyP(1-y)/InP heterojunction structures utilizing Auger spectroscopy and scanning electron-induced X-ray fluorescence in conjunction with chemical etching. Chemical dissolution of the reactively alloyed gold (1.2 wt. % Be) p-metal contact reveals a pitted quaternary surface which is deficient in indium. The latter observation indicates that rapid indium diffusion into the gold contact occurs with the subsequent formation of gold channels penetrating into the quaternary layer.