Growth and Characterization of (001) GaAs Epilayers by Chemical Beam Epitaxy
24 June 1987
The capability of chemical beam epitaxy (CBE) to grow very high quality III-V semiconductor epilayers with superior compositional and lateral uniformity has been demonstrated in recent years. Its growth mechanism and chemistry as well as the technological importance have attracted increasing attention. In the present work, the CBE growth conditions of (001) GaAs, the material quality and the CBE system characteristics have been investigated in details in a RIBER CBE 32 growth chamber equipped with reflection high energy electron diffraction (RHEED) intensity monitoring apparatus.