Growth and Characterization of an Ultrathin Cobalt Silicide Film on Si(311).
01 January 1988
We report the results of a study of a 25angstroms film of Co deposited on Si(311) at near room temperature and reacted at 500C. We find the film to consist almost entirely of two epitaxial orientations of CoSi sub 2 along with a small amount of Co sub 2 Si. The residual resistivity of this film is much lower than that of a similarly grown film on Si(111).