Growth and characterization of epitaxial insulating CaF(2) on Si.

The growth of epitaxial insulators on semiconductors in general and on Si in particular is an area of research which has developed quickly over the last five years. Most of the current interest is in films of materials which can be grown by molecular beam epitaxy. A significant fraction of all of the work in this area has concerned the CaF(2)/Si system. This review will cover that body of work.