Growth and Characterization of High-Yield, Reliable, High Power, High Speed InP/InGaAsP Distributed Feedback Lasers

The high yield growth, fabrication, and characterization of reliable, high speed InP/InGaAsP distributed feedback (DFB) lasers is described. A schematic of the laser structure that is used for this work is shown in figure 1 and is referred to as the Capped Mesa Buried Heterostructure (CMBH). The CMBH uses three epitaxial growths: a base structure that includes the active layer, a high resistance regrowth blocking layer grown by metal-organic vapor phase epitaxy (MOVPE), and a cap layer grown over the entire structure to facilitate making low resistance contacts. The structure is similar to the Semi-i insulating Blocked Planar Buried Heterostructure that has been recently reported (1). We, however, prefer to refer to this structure as the CMBH to differentiate it from other laser structures that use semi-insulating regrowths for current blocking.