Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 mu m emission

With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-Si precursor sets has been first evaluated. Alloy compositions as well as ease of achieving lattice-matching are compared with both (As-2 - Sb-4) or(As-2 - Sb-2). Change in the growth mode process that depends on the precursor couple is presumed to influence strongly As and sb incorporation rates thereby causing difficulties in reaching lattice-matching with Sb,. The above study has allowed the fabrication of a fully doped 3 lambda/2 monolithic Sb-based VCSEL on InP. The main devices performing at 77 K are a 200 nm wide stopband centered at 1.5 mu m and a clear cavity resonance at 1.53 mu m from which electroluminescence has been observed. (C) 1999 Elsevier Science B.V. All rights reserved.