Growth and optical properties of GaAsSb quantum wells for 1.3 mu m VCSELs
01 September 2001
We report compositional dependencies of the 2d-3d growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and VIII ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional dependence of GaAsSb quantum wells and confinement in heterojunctions are reported. (C) 2001 American Vacuum Society.