Growth Kinetics for the GaAs/AlGaAs by Chemical Beam Epitaxy

Recent efforts employing reflection high energy electron diffraction measurements to study the chemical beam epitaxial growth of GaAs using triethylgallium and arsine have resulted in a reaction model of the possible growth mechanism. This model assumes that the existence of tri- , di- and mono-ethyl gallium molecules on the surface dominates the growth kinetics. Considering group III kinetics only for growth temperatures above about 500C, the growth rate results can be closely fitted and the material quality, impurity incorporation as well as morphological features can be explained consistently.