Growth of an epitaxial insulator-metal-semiconductor structure on Si by molecular beam epitaxy.

We report the first successful growth of an epitaxial insulator- metal-semiconductor structure. The substrate is Si(111), on which a layer of CoSi(2), followed by a layer of CaF(2) have been grown by molecular beam epitaxy. The epitaxy of the top CaF(2) layer improves upon rapid thermal annealing. The epitaxial relations of the two overlayers with respect to the substrate have been determined. The lattice of the CoSi(2) is rotated 180(o) with respect to the Si lattice, while the CaF(2) is aligned with the Si lattice.