Growth of Cd(1-x) Zn(x)Te by Molecular Beam Epitaxy.

Cd(1-x) Zn(x)Te has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x-ray rocking curve halfwidths are extremely broad for most ternary compositions. Evidence for a phase separation at the substrate is presented. Attempts to modify the interface yield only modest and uneven improvement in rocking curve halfwidths. The poor quality of many compositions may result from strain induced defects, or it may mean that the material is unstable at the growth temperatures.