Growth of Device Quality GaAs by Chemical Beam Epitaxy.
01 January 1988
The growth of high purity GaAs with excellent uniformity and very low defect density by chemical beam epitaxy using triethylgallium and arsine is described. The residual background impurity is mostly carbon. A mobility of 518 cm sub 2/Vs with a low density of 3.6 x 10 sup 14 cm sup(-13) has been obtained for a growth temperature of 500C. The electrical quality is further evaluated by fabricating a Si doped epilayer into MESFET device using 1micron gate length. A transconductance of 177 mS/mm has been measured. The results indicate that chemical beam epitaxy is a very attractive growth configuration for integrated circuits.