GROWTH OF EPITAXIAL NiSi sub 2 ON Si(111) AT ROOM TEMPERATURE.

Epitaxial type B NiSi sub 2 thin layers have been grown at room temperature on Si(111). Deposition of a few monolayers of nickel followed by co-deposition of NiSi has led to the growth of high quality single crystal layers, with ion channeling chi (min) 2%. No disorder was found at the interfaces of these layers. The topography of the original substrate surface has a predominant effect on the structure of line defects at the NiSi sub 2 interface. Co-deposition at room temperature on annealed silicide thin layers also led to the overgrowth of high quality NiSi sub 2. These results are suggestive of type B NiSi sub 2 formation on Si(111) upon deposition of a few monolayers of nickel at room temperature.