Growth of GaAs on CoSi sub 2/Si by MBE

We report preliminary results of the first MBE growth of GaAs films on evaporated metal films of CoSi sub 2 on Si(111) substrate. The motivation is to realize semiconductor structures for novel devices such as metal base transistors. Such devices are expected to have very high speed because of the virtual elimination of the base resistance, combined with reduced carrier transit times and large current density.