Growth of High Quality Ga sub (x) In sub (1-x) As sub (y) P sub (1-y) by Chemical Beam Epitaxy.

Ga sub (x) In sub (1-x) As sub (y) P sub (1-y) epilayers closely lattice-matched, delta a/a 5 x 10 sup (-4), have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0) by Chemical beam epitaxy. The relative sticking coefficient (or equivalently the incorporation efficiency into solid) for arsenic flux to phosphorous flux, i.e. S sub As/S sub P was between 1.5 and 3 depending on the material compostition. Such values indicated a very efficient incorporation of phosphorus in this process. Very intense efficient luminescence peaks due to excitonic transitions with linewidth (FWHM) as narrow as 3 me/V were obtained.