Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice- matched to (100) GaSb by Molecular beam epitaxy.

The growth conditions to achieve high quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular beam epitaxy are described. The present results indicate that optical pryometry is a reliable method to determine the growth temperature, and a stable substrate temperature is of critical importance in achieving homogeneous InAsSb composition throughout the growth period. The quality of these epilayers is evaluated by double x-ray diffraction measurement, reflection high energy electron diffraction study, surface morphology and low temperature photoluminescence. The optical quality is further demonstrated by the efficient laser oscillation at ~3.9micron observed from an InAsSb active layer by optical pumping.