Growth of microstructures by molecular beam epitaxy.

Molecular beam epitaxy is the most widely currently-used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures.