Growth of thin epitaxial CoSi sub 2 layers on Si(100).
01 January 1988
The growth of high quality, thin (14-70 angstroms) epitaxial CoSi sub 2 layers on Si(100) substrates have been observed. Three types of films have been grown on the Si(100) substrate; pure CoSi sub 2 (100), pure CoSi sub 2 (110), and mixed CoSi sub 2 (100)+CoSi sub (110). The CoSi sub 2 (110) can exist in two 90degrees rotated variants on the Si(100) surface and these are observed. Methods to isolate the epitaxial orientations are described. Results from in-situ LEED and AES as well as ex-situ RBS and plan view TEM are presented.