Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding
01 January 2010
An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency.