Heterojunction InP/InGaAs Phototransistors/Bipolar Transistors Grown by MOVPE.

Heterojunction InP/InGaAs phototransistors with base terminals have been fabricated by atmospheric pressure metal organic vapor phase epitaxy. When operated as bipolar transistors, the devices exhibit high current gain (>1600) and good junction ideality factors (1.06 for the base-emitter and 1.25 for the base-collector junction). When operated as phototransistors, the devices have large optical gain (>800) at an incident power of 1microwatt, at a wavelength of 1.3microns.