Heterostructure semiconductor lasers prepared by molecular beam epitaxy.

The unique capabilities of MBE as an epitaxial growth technique and its important contributions to the field of optoelectronics are illustrated by a discussion of a new class of laser structures including quantum well heterostructure, double-barrier double- heterostructure, and graded-index waveguide separate-confinement- heterostructure lasers. These new lasers, made possible by MBE, have characteristics unmatched earlier.