High Current Density Electron Beam Induced Desorption
28 November 1988
If an intense beam of electrons is focused onto a thin film of certain inorganic materials, such as the group II fluorides, then a hole can be pierced right through the film. This process is characterized by an incident beam current density threshold below which no hole is produced. The variation of the threshold with incident electron energy indicates that the hole drilling mechanism is ionization induced.