High Current Gain InGaAs/InP Double Heterojunction Bipolar Transistors Grown by Metal Organic Vapor Phase Epitaxy.

InGaAs/InP double heterojunction bipolar transistors (DHBTs) have been fabricated from wafers grown by MOVPE. By inserting a thin n-InP layer between the p sup (+) -InGaAs base and the n sup (-) -InP collector excellent transistor characteristics were obtained. The DC and small-signal current gains were 7,000 and 11,000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DC current gains as large as 2,500.