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    High Detectivity D Sup * = 1.0 X 10 Sup (10) Cm Square Root Hz/W GaAs/AlGaAs Multiquantum Well Lambda = 8.3micron Infrared Detector.

High detectivity D sup * = 1.0 x 10 sup (10) cm square root Hz/W GaAs/AlGaAs multiquantum well lambda = 8.3micron infrared detector.

01 January 1988

New Image

We report the first high detectivity, (D sup * = 1.0 x 10 sup (10) cm square root Hz/W), high responsivity (R sub V = 30,000 V/W), GaAs/Al sub x Ga sub (1-x) As multiquantum well detector, sensitive in the long wavelength infrared band (LWIR) at lambda = 8.3micron (operating at a temperature of T = 77K). Due to the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high speed GaAs FETs, large focal plane arrays of these detectors should be possible.