High Frequency InGaAs/InP Multiple Quantum Well Buried Mesa Electroabsorption Optical Modulator.

We describe the structure and performance characteristics of an InGaAs/InP multiple quantum well (MQW)) electroabsorption buried mesa optical modulator. The device is fabricated with two metal organic chemical vapor deposition (MOCVD) growth steps, wherein small area circular (40 micron diameter) p- i-n diodes are buried with Fe-doped semi-insulating (SI) InP regrowth. The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and very high modulation bandwidth (5.3 GHz) operating at 1.62 micron wavelength.