High-mobility field-effect transistors based on transition metal dichalcogenides

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm(2)/V s for the p-type conductivity in the WSe2-based FETs at room temperature). 

These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in ``flexible{''} electronics. (C) 2004 American Institute of Physics.