High-Performance and High-Uniformity InP/InGaAs/InP DHBT Technology for High-Speed Optical Communication Systems
01 January 2002
Recently InP/InGaAs/InP double-heterostructure bipolar transistors (DHBT) have attracted much attention in the realization of high-speed optical communication systems [1-3]. Consequently, intensive efforts have been devoted to the device fabrication for further improvement of fsubT and fsubMAX [4-6]. Howver, in addition to high f sub T and fsubMAX, a useful DHBT technology also needs to achieve ow turn-on voltage VsubTH, low knee coltage VsubK, high break-down voltages BVsubCEO, BVsubCBO, on-state bias limits, excellent device yields, and high circuit-performance uniformity. Optimization of these parameters is needed in order to implement high-speed components in the systems.