High Performance Ga sub (0.4) In sub (0.6) As/Al sub (0.55) In sub (0.45) As Pseudomorphic Modulation-Doped Field-Effect Transistors Prepared by MBE

High performance Ga sub (0.4) In sub (0.6) As/Al sub (0.55) In sub (0.45) As pseudomorphic modulation-doped field-effect transistors (MODFETs) have been further improved by replacing the Al sub (0.48) In sub (0.52) As buffer layer with an Al sub (0.55) In sub (0.45) As/Al sub (0.41) In sub (0.59) As strained-layer superlattice (SLS) buffer layer, grown lattice matched to InP substrate by molecular beam epitaxy (MBE).