High performance InGaAs junction field effect transistor with P/Be Co-Implanted Gate.

InGaAs junction field effect transistors (JFET) are fabricated with MOCVD grown n-InGaAs and semi-insulating Fe:InP layers on n sup + -InP substrate with a P/Be co-implanted p sup + self-aligned gate. The device showed a very high transconductance of 245 ms/mm (intrinsic transconductance of 275 ms/mm) at zero gate bias and good pinch-off behavior for a gate length of 0.5microns. The effective electron velocity is deduced to be 2.8x10 sup 7 cm/s, and the cutoff frequency is determined to be as high as 78 GHz.