High Performance Integrated Circuits for Lightwave Systems.

01 January 1988

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This paper surveys integrated circuits for lightwave systems that have been reported in the literature and that function at data rates ranging from approximately 500 Mb/s to 6 Gb/s. Components reviewed include multiplexer/ demultiplexer, laser drivers, preamplifiers/amplifiers, timing recovery and decision circuits. Technologies covered include silicon bipolar and NMOS, and gallium arsenide MESFET. The paper concludes with a brief look at reported state-of-the-art IC technologies which include silicon bipolar and NMOS, and GaAs MESFET, SDHT, and heterojunction bipolar. Device parameters influencing circuit operating speed are reviewed.