High power gain guided InGaAsP laser array.

We have fabricated InGaAsP gain guided laser arrays emitting at 1.3micron. These devices have threshold currents in the range 300-400mA at 30C and have been operated to pulsed output powers as high as 400mW. More than 100mW of output power has been obtained up to an ambient temperature of 60C. The lasers emit in multilongitudinal modes with a far field divergence of 20x35 degrees. A gain guided InGaAsP laser array of the type described here can be used in some applications requiring high power lasers emitting at 1.3micron.