High Power SIBPBH Lasers at 1.3microns and 1.5microns Grown Entirely by Atmospheric-OMVPE

Semi-insulating blocked planar buried-heterostructure (SIPBH) lasers grown entirely by atmospheric-OMVPE had current thresholds as low as 20 mA and differential quantum efficiencies> 20% at 1.3 um and 1.5 um. Power outputs of about 25 mW.facet were obtained. These results are similar to SIPBH lasers where LPE was used to grow the active layer. Combined with the inherent planarity and uniformity of atmospheric-OMVPE, it appears possible to grow material which can give a high DFB laser yield.