High Quality Long-Wavelength Lasers Grown by Atmospheric Organo- Metallic Vapor Phase Epitaxy Using Tertiarybutylarsine.

High quality long wavelength InGaAsP/InP lasers were grown by atmospheric organo-metallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3. Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH sub 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds, I sub (th) as low as 11 mA were obtained for a 2microns semi- insulating planar buried heterostructure laser lasing near 1.3microns wavelength. The differential quantum efficiencies, etaD, were as high as 21% indicating a low internal loss alpha = 21 cm sup (-1). These values are currently state-of-the- art.