High quality narrow GaInAs/InP quantum wells grown by atmospheric organo-metallic vapor phase epitaxy.

A series of GaInAs/InP quantum well form 10angstroms to 135angstroms have been grown by atmospheric OMVPE using pressure balancing techniques. These wells exhibit strong exciton peaks a 4K and have quantized energy shifts of up to 326 meV. These energy shifts ate compared with two simple finite well models (Kronig-Penny and Envelop Function Approximation) using a conduction band offset of Vc ~ 40% deltaEG (GaInAs) and are in close agreement with the latter model. The WHM linewidths indicate an average interface roughness of ~1 monolayer.