High Quality Si and Si sub (1-x) Ge sub x Films and Heterostructural Devices Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD).

Rapid thermal chemical deposition (RTCVD) is a processing technique that results the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in-situ and immediately thereafter deposit epitaxial layers. Very thin layers (100angstroms) can be deposited by either gas or lamp power switching. We report here the growth of high quality Si and Si-Ge layers, both intrinsic and insitu doped, and devices that were processed from multilayer structures. P/N homojunctions with ideality factors of about 1.0 over 10 orders of magnitude in current, with reverse leakage currents of about 70 pA/cm sup 2, have been fabricated.