High quality single GaAs quantum wells grown by metalorganic chemical vapor deposition.

GaAs-Al(x)Ga(1-x)As single- and multiquantum well structures grown by metals organic chemical vapor deposition, have been examined for the first time in detail using low temperature photoluminescence, cathodoluminescence, and transmission electron microscopy. The better heterointerfaces are very uniform with a large scale roughness of approximately plus or minus a monlayer along the interface on a scale of the exciton diameter or larger and a composition gradient width of less than three monolayers across the interface.