High quantum efficiency amorphous silicon photodetectors with picosecond response time.
01 January 1984
Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling ocilloscope limited response times of 40 ps (FWHM) have been fabricated. Utilizing ultra-thin films of rf glow discharge deposited a-Si:H carrier sweep-out was achieved in a new microstrip transmission line structure. The performance of these devices, for picosecond pulse detection, is now comparable to that of crystalline semiconductor detectors.