High Resistance Regions Produced in In sub (1-x-y) Ga sub x Al sub y As System by He Ion Implantation.

The sheet resistance, Hall mobility, and carrier concentration as a function of He ion dose have been measured across the In sub (l-x-y) Ga sub x Al sub y AS system. Starting with heavily doped n-type epitaxial layers (n ~ 10 sup (18) cm sup (-3), the sheet resistance can be increased more than 5 orders of magnitude for He doses above 2.5 x 10 sup (13) cm sup (-2). Except for the lowest bandgap constituent In sub (0.53) Ga sub (0.47) As, the sheet resistance can be made high enough and sufficiently thermally stable to be potentially useful for device applications.