High resistivity in InP helium bombardment.
01 January 1984
Helium implants over a fluence range of 10(11) to 10(16) ions/cm (2), reproducibly form high resistivity regions in both p- type and n-type InP. Average resistivities of greater than 10(9) ohm-cm for p-type InP and of 10(3) ohm-cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of Helium bombardment into the compound target, InP, yielding the mean projected range and the range straggling.