High Resolution TEM/TED Microstructural Studies of High Temperature (up to 140 C) Annealed High-Dose Oxygen Implanted Silicon
31 August 1986
Synthesised buried oxide layers, related to Separation by Implanted OXygen (SIMOX)/Silicon On Insulator (SOI) technology, have been formed by high-dose oxygen implantation into silicon (100) wafers. Examination by high resolution Transmission Electron Microscopy (TEM) and Transmission Electron Diffraction (TED), before and after annealing, provided the required resolution to reveal detailed information on the microstructure and the distribution of the oxygen.