High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance

Al0.5In0.5P/In0.15Ga0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger DeltaE(c) (0.45eV) and a wide bandgap AIInP Schottky layer. The device, biased at V-ds = 3.0V and operated at 2.4GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17dB. Two-lone measurement reveals that third-order intermodulation at an input power of 0dBm is -29dBc and the output intercept point (OIP3) is 30.4 dBm for devices with a 1mm wide gate.