High sensitivity Ga(0.47)In(0.53)As photoconductive detectors prepared by vapor phase epitaxy.

We report a Ga(0.47)In(0.53)As photoconductive detector with a receiver sensitivity better than that of a Ga(0.47)In(0. 53)As pin photodiode. The detector, prepared by trichloride vapor phase epitaxy, has an interdigitated structure with a 70% filling factor. Our study concludes that photoconductive detectors are attractive devices for high data-rate lightwave communication applications.