High-Speed 1.3-microns GaInAsP P-Substrate Buried Crescent Lasers with Semi-Insulating Fe/Ti-Doped InP Current Blocking Layers

High-speed 1.3-microns GaInAsP p-substrate buried crescent lasers were made with an MOVPE-grown semi-insulating Fe/Ti-doped InP current blocking layer. Due to Zn out-diffusion from the buffer layer of p-substrate lasers, deep-level donors such as Ti are needed to make InP semi-insulating in the current blocking layer. Devices with broad-area contacts had a modulation bandwidth of 11 GHz, a low threshold current of 11 mA, and an output power of 23 mW per facet.