High speed crystal growth and solidification using laser heating.

High speed melting and freezing phenomena are reviewed with emphasis on silicon crystal growth. Laser heating has been particularly advantageous for the exploration of such velocity regimes. New transient probe techniques have been developed to investigate interface motion. The solid-phase epitaxial growth of amorphous Si overlayers is first discussed. Silicon liquid-phase epitaxy and enhanced dopant segregation effects up to velocities of 15 m/sec are reviewed. Amorphous Si is formed from the melt at velocities greater than 15 m/sec.