High speed enhancement mode InP MISFETs exhibiting very high transconductance.

We report the fabrication and performance of enhancement mode InP MIS field effect transistors having transconductances as high as 200 mS/mm for a gate length of 1micron. The epitaxial layers of the structure have been grown by chloride vapor phase epitaxy. Electron beam evaporated Si0(2) has been utilized as gate insulator. The MISFET's have low gate to source leakage currents (125nA), and saturation drift velocities as high as 3x10(7) cm/s. The transconductance value achieved in the present work is one of the highest ever measured on InP FET's.