High temperature operation of 1.55micron InGaAsP double-channel- buried- heterostructure lasers grown by LPE.
01 January 1984
The high temperature operation of InGaAsP double-channel-buried- heterostructure (DCBH) lasers emitting at 1.55micron is reported. The 1.55micron DCBH lasers have threshold currents as low as 18mA at 20C. The threshold current temperature sensitivity between 10C and 75C is characterized by a T(o) value of 55- 66K. Electro-optical derivative measurements show that the 1.55micron DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 110C. This is the highest CW operating temperature obtained to date for a 1.55micron InGaAsP laser.