HIGH-T(O) LOW-THRESHOLD CRESCENT INDIUM GALLIUM ARSENIDE PHOSPHIDE MESA-SUBSTRATE BH LASERS.

A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (— = 1.3 —m) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 —m cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ~15 mW/facet, has been realised.