High Transconductance Insulating Gate InP/InGaAs BP-DH-MODFETs Grown by MOVPE

Buried P-channel Double Heterostructure Modulation-Doped Field- Effect Transistors (BP-DH-MODFETs) with InGaAs quantum-well channel have been fabricated for the first time with high transconductance and good breakdown voltage, by forming the metal gate directly on an Fe- doped InP insulating layer grown by metalor-ganic vapor phase epitaxy (MOVPE). MODFETs utilizing a MBE-grown InGaAs channel layer lattice-matched on InP substrate have demonstrated superior noise figures with very high cut-off frequencies more than 100 GHz.