Historical Development and Future Performance Projection of Mosfet (VLSI)

We will review the historical developments of the metal-oxide- semiconductor field effect transistor (MOSFET) which is the dominant device used in very-large-scale integrated (VLSI) circuits. The chronological advances of the MOSFET can be divided in three phases. We will discuss major milestones in the aforementioned three phases, present the future trends of logic-gate speed and power-delay product, and briefly consider the fundamental limits of VLSI.