Homoepitaxial Growth of CoSi sub 2 and NiSi sub 2 on (100) and (110) Surfaces at Room Temperature.

Homoepitaxial growth of NiSi sub 2 CoSi sub 2 on (100) and (110) surfaces demonstrated at room temperature. Co-deposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, pre-annealed, silicide layers on Si (100) and (110) leads to single crystal growth. High quality NiSi sub 2 and CoSi sub 2 films, with ion channeling chi sub (min) 4%, have been fabricated. The epitaxial orientation and the interfacial defect structures of the original silicide templates are maintained in the overgrown silicide. The high temperatures usually required for the formation of NiSi sub 2 CoSi sub 2 are related to the nucleation and mass transport processes. It is concluded that the reaction of disilicide takes place at room temperature.