Hot Carrier Aging of 1.0micron CMOS NMOSFET Devices

This paper reports room temperature hot carrier aging measurements under dc stress of LDD n-channel MOSFETs used in the 1.0micron CMOS technology being manufactured for VLSI custom logic, static RAMs and processors. The transconductance degrades the most in device aging, whereas threshold shift is observed when delta g sub m changes more than 10%.